HAT3010R-EL-E

Power Field-Effect Transistor, 6A I(D), 60V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Original price was: $3.2200.Current price is: $3.0590.

Innovo Code#: N22004185
Brand:
Available Stock: 751

Quantity (pcs) Unit Price (USD)
1 - 99 $3.0590
100 - 999 $2.8980
1000 - 9999 $2.7370
10000 - 99999 $2.5760
Category:
Part Package Code SOP
Package Description 3.95 X 4.9 Mm, Plastic, Fp-8dav, Sop-8
Pin Count 8
Manufacturer Package Code PRSP0008DD
ECCN Code EAR99
Configuration Separate, 2 Elements With Built-In Diode
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology Metal-Oxide Semiconductor
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel And P-Channel
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Form Gull Wing
Terminal Position Dual
Time@Peak Reflow Temperature-Max (s) 20
Transistor Application Switching
Transistor Element Material Silicon

 


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