IRFF230

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Original price was: $7.5000.Current price is: $7.1250.

Innovo Code#: N22002899
Brand:
Available Stock: 213

Quantity (pcs) Unit Price (USD)
1 - 99 $7.1250
100 - 999 $6.7500
1000 - 9999 $6.3750
10000 - 99999 $6.0000
Category:
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature Avalanche Rated
Avalanche Energy Rating (Eas) 54 Mj
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.46 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Metal
Package Shape Round
Package Style Cylindrical
Polarity/Channel Type N-Channel
Power Dissipation Ambient-Max 25 W
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount No
Terminal Finish Tin Lead
Terminal Form Wire
Terminal Position Bottom
Transistor Application Switching
Transistor Element Material Silicon
Turn-off Time-Max (toff) 90 Ns
Turn-on Time-Max (ton) 80 Ns

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