IRF7821TRPBF

Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Original price was: $0.2100.Current price is: $0.1995.

Innovo Code#: N22004170
Brand:
Available Stock: 278

Quantity (pcs) Unit Price (USD)
1 - 99 $0.1995
100 - 999 $0.1890
1000 - 9999 $0.1785
10000 - 99999 $0.1680
Category:
Part Package Code SOIC
Package Description Sop-8
Pin Count 8
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 44 Mj
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13.6 A
Drain-source On Resistance-Max 0.0091 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode Enhancement Mode
Operating Temperature-Max 155 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Matte Tin
Terminal Form Gull Wing
Terminal Position Dual
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon

X

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