FDS8978

Power Field-Effect Transistor, 6.9A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Original price was: $0.4200.Current price is: $0.3990.

Innovo Code#: N22004113
Brand:
Available Stock: 189

Quantity (pcs) Unit Price (USD)
1 - 99 $0.3990
100 - 999 $0.3780
1000 - 9999 $0.3570
10000 - 99999 $0.3360
Category:
Part Package Code SOIC
Package Description Rohs Compliant, Sop-8
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150″NARROW BODY
ECCN Code EAR99
Additional Feature Ultra-Low Resistance
Avalanche Energy Rating (Eas) 57 Mj
Configuration Separate, 2 Elements With Built-In Diode
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.9 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology Metal-Oxide Semiconductor
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 49 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Matte Tin
Terminal Form Gull Wing
Terminal Position Dual
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon

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