BSC050N03LSG

Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Original price was: $4.2400.Current price is: $4.0280.

Innovo Code#: N22003959
Brand:
Available Stock: 598

Quantity (pcs) Unit Price (USD)
1 - 99 $4.0280
100 - 999 $3.8160
1000 - 9999 $3.6040
10000 - 99999 $3.3920
ECCN Code EAR99
Additional Feature Avalanche Rated, Logic Level Compatible
Avalanche Energy Rating (Eas) 35 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology Metal-Oxide Semiconductor
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Tin (Sn)
Terminal Form Flat
Terminal Position Dual

X

Panel Tool

Layout Mode

Themes

Custom Colors

EMI Options
Credit Card
Debit
No Cost EMI