FDS8884

Power Field-Effect Transistor, 8.5A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Original price was: $0.6400.Current price is: $0.6080.

Innovo Code#: N22003946
Brand:
Available Stock: 2,500

Quantity (pcs) Unit Price (USD)
1 - 99 $0.6080
100 - 999 $0.5760
1000 - 9999 $0.5440
10000 - 99999 $0.5120
Package Description Rohs Compliant, So-8
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150″NARROW BODY
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature Fast Switching
Avalanche Energy Rating (Eas) 32 Mj
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.5 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology Metal-Oxide Semiconductor
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount Yes

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